香港城市大学唐永炳博士3月18日学术报告

发布时间:2010-03-10访问量:39设置

 

人:唐永炳博士

Department of Physics and Materials Science, City University of Hong Kong

报告题目:Controllable synthesis and device applications of III-V nanostructures and graphenes

报告时间:318日下午1430

报告地点:FUNSOM实验室208报告室(材料大楼910号楼)

 

摘要:

This report introduces some results in controllable growth of well-aligned nanostructures of III-V group semiconductors such as AlN and GaN. Based on the successful synthesis of desired nanostructures, the field emission, photovoltaic properties, and electrical transport properties were investigated via fabricating functional devices such as field emission display panels, heterojunction diode, and field-effect transistors, and these semiconducting nanostructures show great potential for developing high-performance nanoscale optoelectronic devices. Meanwhile, for fundamental studies, some results about synthesis, physical properties and potential applications of graphene, a rapidly rising star in materials science and condensed-matter physics, are briefly discussed here.

 

返回原图
/


XML 地图 | Sitemap 地图