（Department of Physics and Materials Science, City University of Hong Kong）
报告题目：Controllable synthesis and device applications of III-V nanostructures and graphenes
This report introduces some results in controllable growth of well-aligned nanostructures of III-V group semiconductors such as AlN and GaN. Based on the successful synthesis of desired nanostructures, the field emission, photovoltaic properties, and electrical transport properties were investigated via fabricating functional devices such as field emission display panels, heterojunction diode, and field-effect transistors, and these semiconducting nanostructures show great potential for developing high-performance nanoscale optoelectronic devices. Meanwhile, for fundamental studies, some results about synthesis, physical properties and potential applications of graphene, a rapidly rising star in materials science and condensed-matter physics, are briefly discussed here.