德国洪堡大学Norbert Koch教授2月20日下午学术报告

发布时间:2014-02-17访问量:48设置

报告人:Norbert Koch 教授

 

Institut für Physik, Humboldt-Universit?t zu Berlin, 12489 Berlin, Germany

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany

 

题目:  Controlling interface electronic properties with organic molecules

 

时间:2014220(星期四)下午2:00

地点:909号楼一楼B会议室(Conference Room B, 909-1F)

 

摘要:

Interfaces play a key role for the function and efficiency of organic (opto-) electronic devices. Electrical contacts to organic semiconductors must feature lowest possible contact resistance, which can be achieved by designing the electrode such that its Fermi level pins at the semiconductor valence or conduction levels. The various methods and materials that allow establishing such a situation will be discussed in the light of the underlying fundamental physical mechanisms. The focus is on employing strong molecular acceptors and donors and their charge transfer interactions with metals and conductive oxides on work function tuning.

For inorganic/organic and organic/organic semiconductor heterojunctions, the level of understanding of the mechanisms that govern the energy level alignment is less established. However, for selected well defined model systems long-range charge transfer from a metal electrode through one organic layer to a subsequently deposited one has been evidenced. It remains yet to be clarified if there exists a thickness-limit of this mechanism for establishing electronic equilibrium across heterojunctions. Furthermore, doping of the semiconductors appears as interesting approach to tune energy levels at interfaces, which will be exemplified for an inorganic/organic semiconductor interface.

 

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