美国韦恩州立大学Zhixian Zhou副教授4月29日上午学术报告

发布时间:2014-04-21访问量:38设置

报告人:Zhixian Zhou 副教授

Department of Physics and Astronomy

Wayne State University

Detroit, MI 48201 

题目  Contact and Interface Engineering in Field-Effect Transistors of Two-Dimensional Layered Semiconductors beyond Graphene

时间:2014429(星期二)上午10:00

地点:909号楼一楼B会议室(Conference Room B, 909-1F)

 

摘要:

The successful isolation of two-dimensional (2D) graphene has stimulated research on a broad range of other 2D materials, among which layered transition metal dichalcogenides (TMDs) have attracted particular attention. The semiconducting members of the TMD family including MoS2, MoSe2, WS2 and WSe2 have not only demonstrated many of the "graphene like" properties highly desirable for electronic applications such as a relatively high mobility, mechanical flexibility, chemical and thermal stability, and the absence of dangling bonds, but also have a substantial band gap (1 ~ 2 eV depending on the material and its thickness), which is absent in 2D graphene but required for mainstream logic applications. However, the electrical transport mechanisms in TMD FETs, particularly, the factors that limit the ultimate device mobility are poorly understood. Moreover, while low resistance Ohmic contacts are essential for optimizing the FET performance, large bandgap semiconductors often fail to form Ohmic contacts with metals. In order to optimize the performance of TMD field effect transistors (FETs), it is crucial to use low resistance Ohmic contacts.1 In this talk, I will discuss our recent work on the application of graphene as a work-function-tunable electrode material for atomically thin layered TMDs, and to systematically study the electric-field tunability of the graphene/TMD contacts, as well as the intrinsic charge transport  properties of the TMD channel in the limit of low resistance Ohmic contacts. In addition to contact engineering, I will also discuss the important role of the substrate/dielectric in carrier mobility.2

1. Perera, M. M.; Lin, M.-W.; Chuang, H.-J.; Chamlagain, B. P.; Wang, C.; Tan, X.; Cheng, M. M.-C.; Tománek, D.; Zhou, Z. Improved Carrier Mobility in Few-Layer Mos2 Field-Effect Transistors with Ionic-Liquid Gating. ACS Nano 2013, 7, 4449-4458.

2. Chamlagain, B.; Li, Q.; Ghimire, N. J.; Chuang, H.-J.; Perera, M. M.; Tu, H.; Xu, Y.; Pan, M.; Xiao, D.; Yan, J.; Mandrus, D.; Zhou, Z. Mobility Improvement and Temperature Dependence in Mose2 Field-Effect Transistors on Parylene-C Substrate. ACS Nano 2014, 10.1021/nn501150r.

 

个人简介:

Education

Lanzhou University, Lanzhou, Gansu        Physics     BS 

Florida State University, Tallahassee, FL     Physics     Ph.D.

                                                                                                                         

Appointments

Wayne State University, Detroit, MI                              Associate Professor     2013 – present

Wayne State University, Detroit, MI                              Assistant Professor       2007 – 2013

Oak Ridge National Laboratory, Oak Ridge, TN      Research Associate      2005 – 2007

National High Magnetic Field Lab, Tallahassee, FL      Graduate Research Assistant   1999 – 2004

 

Research Interests and Activities:

Fabrication, characterization, and electrical transport studies of various nanoscale materials and devices including graphene, layered transition-metal-dichalcogenides, back phosphorus, and their heterostructures.

 

Current Research Funding:

NSF-ECCS and NSF-DMR

 欢迎感兴趣的老师和同学参加!

 

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