德国洪堡大学Norbert Koch教授9月26日下午学术报告

发布时间:2014-09-24访问量:18设置

报告人:Norbert Koch1,2教授

 

1Institut für Physik, Humboldt-Universit?t zu Berlin, 12489 Berlin, Germany

2Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, 12489 Berlin, Germany

 

题目:Understanding and designing hybrid inorganic/organic semiconductor interfaces

时间:2014926日(星期五)下午3:30

地点:独墅湖校区909号楼一楼B会议室

 

摘要

The fundamental limits of inorganic semiconductors for emerging light emitting applications, such as holographic displays, biomedical imaging, and ultrafast data processing and communication, might be overcome by hybridization with their organic counterparts, which feature enhanced frequency response and color range. Innovative hybrid inorganic/organic structures (HIOS) might exploit efficient electrical injection and high excitation density of inorganic semiconductors and subsequent energy transfer to the organic semiconductor, provided that the radiative emission yield is high. An inherent obstacle to that end is the unfavorable energy level offset at HIOS, which rather facilitates charge transfer that quenches light emission. We introduce a technologically relevant method to optimize HIOS energy levels, here comprising ZnO as the inorganic component. The ZnO work function can be substantially increased and lowered with an organic acceptor and donor monolayer, respectively, allowing a dynamic work function tuning range of more than 4 eV. This, in turn, enables aligning the frontier levels of the inorganic and organic semiconductors at their interface. For example, a properly tuned HIOS of ZnO and a tailored oligophenylene exhibits a sevenfold increased radiative emission yield, validating the relevance of the HIOS approach.

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