维也纳工业大学Yury博士9月30日下午学术报告

发布时间:2017-09-28访问量:178设置

报告人:Dr. Yury Illarionov

  

 

Ioffe Physical-Technical Institute of the Russian Academy of Sciences and

the Institute for Microelectronics of Vienna university of technology

  

报告题目:Reliability of 2D electronics

报告时间:04:00 p.m., September 30th (Saturday)

报告地点:Conference Room 308, BLDG 910-3F


Abstract

Owing to the fascinating properties of 2D crystals, several attempts to fabricate FETs with 2D channels have been undertaken recently. However, although a huge amount of funding has been already invested into 2D materials research, no commercial device technology is available by now. We argue that in addition to fabrication related issues, a fundamental problem for the transition from device prototypes to industrial 2D FETs is the lack of attention paid to their reliability, which has to be understood for any material system that is to acquire some technological significance. As such, it is to be expected that reliability of next-generation 2D FETs will become a hot research topic in the nearest future. In this talk I will summarize our recent reliability studies for graphene, MoS2  and black phosphorus FETs. Based on our results, I will try to answer a question “How to improve the reliability of 2D devices?”.

  

Biography

Yury Illarionov was born in Saint-Petersburg in 1988. He received the B.Sc. and M.Sc. degrees from St.-Petersburg State Polytechnical University (Russia) in 2009 and 2011, respectively. Also, in 2012 he received a double Erasmus Mundus M.Sc. degree from Grenoble INP (France) and University of Augsburg (Germany). He also visited IRCELYON (France, 2011) and SIMTech (Singapore, 2012). In 2015 he received the Ph.D. degree from Ioffe Physical-Technical Institute (Russia) and Dr. techn. degree from TU Wien (Austria). Currently, Dr. Yury Illarionov is with Ioffe Physical-Technical Institute and the Institute for Microelectronics (TU Wien). His scientific interests are centered around the reliability of 2D FETs and the injection properties of tunnel-thin insulators. He contributed to about 60 journal papers (including ACS Nano, npj 2D materials and applications and 2D Materials) and conference abstracts.

  

  

Contact: Prof. Mario Lanza

责任编辑:杨娟


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