Atomic Layer Deposition System(ALD)

time:2016-05-17Hits:127设置

Instrument name

Atomic Layer Deposition System (ALD)

Model

Savannah-100

Manufacturer

Cambridge Nano Tech

Specifications

1.Precursor Source: There are four kinds of precursor sourcs, three of them could be heated, but the fourth one could not be 

heated.

2.Sample Size: Up to 4”

3.Deposition Temperature: The maximum temperature is 300

4. Carrier Gas: N2, MFC control is 10-1000 sccm.

Applications and Uses

Atomic Layer Deposition System (ALD) is a self-limiting process capable of precise monolayer growth, which is mainly used for the dielectric layer thin film deposition in the field of nano field-effect transistor (FET) and organic light emitting diode (OLED).

Accessories

Mechanical Pump

ContactMingfa Peng

Tel.: 65883196

E-mailmfpeng@suda.edu.cn
























                                            Editor: Mingfa Peng

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